A silicon oxide layer is then deposited and the gate electrode 16 and the oxide layer are then etched to form gate oxide layer 18 and gate oxide spacers 20. A metal is then deposited and patterned to form a gate electrode 16. A P-type doped region 12 is formed in the substrate and a gate contact 14 is then formed. 1, a conventional method for making a transistor is to provide a monocrystalline silicon substrate 10. HEMT devices are characterized by high electron mobility and may be used in RF applications, such as high frequency (HF) amplifiers.Īs shown in FIG. These transistors are referred to as High Electron Mobility Transistors (HEMT). Transistors have been used for many years as switching elements in microwave applications. This invention relates to a method of making transistors for radio frequency (RF) applications, and more particularly to a method of making transistors having a doped silicon channel with an epitaxial silicon source and drain for RF applications. This will do the same as the above but allow you to pass any type of object as an option.įor more information on functions and arguments in javascript see here: New_options is a function argument in the tracx trainer software 4 source code. This means that the machine interprets it as an instruction to execute that function, which is probably not what you meant. Tacx trainer software 4 is a function call in the tracx trainer software 4 source code. Compaq presario cq40 laptop crack windows 7 ultimate X64
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